By J. Roskam
Read Online or Download Airplane Design Vol 1-7 [Errata] PDF
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Extra resources for Airplane Design Vol 1-7 [Errata]
25, and 2. 7 . 26as ei (2. 7. 28) g' L D i+� In accumulation and in strong inversion Q s depends exponentially on 'ljJ s and Cd » Ci , while in depletion and weak: inversion Cd is comparable to Ci . Eq. 2. 7. 22and curve (a) of Fig. 2. 19describe the system in thermal equilib C('ljJs = 0) = d rium. If the applied voltage is modulated in time, however, the characteristic of the capacitance Cd depends on the ability of the charge distribution to follow the signal. In the case of inversion, this ability is already impaired for rela tively slow signals, because the inversion charge at the semiconductor surface is electrically almost insulated and its concentration can only be changed via the normal generation-recombination process.
2, and of the low injection condition; negligible generation current in the depletion layer; and constant electron and hole currents within the depletion layer. 13 Comparison of the current-voltage characteristics of an ideal and a practical diode. (a) Generation recombination current domain. (b) Diffusion current domain. (c) High-injection domain. (d) Series-resistance effect. (e) Reverse leakage current due to generation-recombination and sur face effects. Figure adapted from 1. L. Moll (1958).
N: . . : : : . : . : : . :: . 2 Physical structure of (a) an nFET and (b) a pFET in a common p- substrate. The pFET rests in a n-well within the substrate. (also called polysilicon or poly), which has low resistivity. We can view the transistor as having four terminals; the gate (G), the source (S), the drain (D), and the bulk (B). Because the n+ source and drain regions can supply a lot of Chapter 3 50 electrons to the channel, this device is called an n-channel MOSFET (nFET)4 .
Airplane Design Vol 1-7 [Errata] by J. Roskam